Dissertation / PhD Thesis/Book PreJuSER-36008

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Optische und elektrische Eigenschaften von Schichtsystemen aus porösem Silizium



1999
Forschungszentrum, Zentralbibliothek Jülich

Jülich : Forschungszentrum, Zentralbibliothek, Berichte des Forschungszentrums Jülich 3672, () = Aachen, Techn. Hochsch., Diss., 1999

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Report No.: Juel-3672

Abstract: Porous silicon Interference Filters have long had a broad field of applications, In the present work the field of applications for porous interference filters could be reasonably enhanced hy a new etching technique. Thereby wedge shaped porous layers are etched by a laterally linearly varying current density along the subsl.rate surface. With this technique it is also possible to etch layers lying above each other) with different thickness and apex angle. These layers can he used to form interference filters with a laterally varying reflection or transmission wavelength. Based on this type of interference filters a one-chip photometer was realized. The photometer has major advantages due to its simple production method and its smallness. In the second part. of the work the electrical propert.ies of single and mult.i-layer structures were investigated. The modification of etching parameters leads to a variation of t.he silicon skeleton size dimensions. Because the Fcrmilengt.h in silicon lies close to the size dimension of the silicon skeleton quantum confinement. appears. The band broadening is then due to the extent of the quantum confinement. It is thus possible to achieve a band modulation by a vertical variation of the size dimension in the silicon skeleton. The band modulation can be used as the design basis for several devices. Here a layer system with negative differential resistance (NDH) was invesl.igated. It could be shown that the NDR effect exists in layers of a part.icular porosity independent. of the layer system composition. The explanation of the effect given by Koshida [91] is found to be valid with a small modification. The ageing stability has to be improved.


Note: Record converted from VDB: 12.11.2012
Note: Aachen, Techn. Hochsch., Diss., 1999

Contributing Institute(s):
  1. Institut für Schicht- und Ionentechnik (ISI)
Research Program(s):
  1. ohne FE (ohne FE)

Appears in the scientific report 1999
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 Record created 2012-11-13, last modified 2020-06-10